dss5220v document number: ds31660 rev. 2 - 2 1 of 5 www.diodes.com march 2009 ? diodes incorporated dss5220 v new product low v ce(sat) pnp surface mo unt transistor features ? epitaxial planar die construction ? complementary pnp type available (dss4220v) ? low collector-emitter saturation voltage, v ce(sat) ? high current gain (h fe ) at high i c ? surface mount package suited for automated assembly ? ultra-small surface mount package ? lead free/rohs compliant (note 1) ? "green device" (note 2) mechanical data ? case: sot-563 ? case material: molded plastic, ?green? molding compound. ul flammability classification rating 94v-0 ? moisture sensitivity: level 1 per j-std-020d ? terminals: finish ? matte tin annealed over copper leadframe. solderable per mil-std-202, method 208 ? marking information: see page 4 ? ordering information: see page 4 ? weight: 0.003 grams (approximate) maximum ratings @t a = 25c unless otherwise specified characteristic symbol value unit collector-base voltage v cbo -20 v collector-emitter voltage v ceo -20 v emitter-base voltage v ebo -5 v collector current - continuous i c -2 a peak pulse collector current i cm -4 a base current (dc) i b -0.3 a peak base current i bm -0.6 a thermal characteristics characteristic symbol value unit power dissipation (note 3) @ t a = 25 c p d 600 mw thermal resistance, junction to ambient (note 3) @ t a = 25 c r ja 208 c/w operating and storage temperature range t j , t stg -55 to +150 c notes: 1. no purposefully added lead. 2. diode?s inc.?s ?green? policy can be found on our website at http://www.diodes.com /products/lead_free/index.php. 3. device mounted on fr-4 pcb with minimum recommended pad layout. top view bottom view device schematic pin out configuration 123 654 1, 2, 5, 6 3 4
dss5220v document number: ds31660 rev. 2 - 2 2 of 5 www.diodes.com march 2009 ? diodes incorporated dss5220 v new product electrical characteristics @t a = 25c unless otherwise specified characteristic symbol min typ max unit test condition off characteristics collector-base breakdown voltage v ( br ) cbo -20 ? ? v i c = -100 a, i e = 0 collector-emitter breakdown voltage (note 4) v ( br ) ceo -20 ? ? v i c = -10ma, i b = 0 emitter-base breakdown voltage v ( br ) ebo -5 ? ? v i e = -100 a, i c = 0 collector cutoff current i cbo ? ? -100 -50 na a v cb = -20v, i e = 0 v cb = -20v, i e = 0, t a = 150c collector cutoff current i ces ? ? -100 na v ce = -20v, v be = 0 emitter cutoff current i ebo ? ? -100 na v eb = -5v, i c = 0 on characteristics (note 4) dc current gain h fe 220 220 220 155 60 ? ? ? ? ? ? ? ? ? ? ? v ce = -2v, i c = -1ma v ce = -2v, i c = -100ma v ce = -2v, i c = -500ma v ce = -2v, i c = -1a v ce = -2v, i c = -2a collector-emitter saturation voltage v ce(sat) ? ? ? ? ? ? ? ? ? ? ? ? -80 -115 -220 -210 -455 -390 mv i c = -100ma, i b = -1ma i c = -500ma, i b = -50ma i c = -1a, i b = -50ma i c = -1a, i b = -100ma i c = -2a, i b = -100ma i c = -2a, i b = -200ma collector-emitter saturation resistance r ce ( sat ) ? ? 210 m ? i c = -1a, i b = -100ma base-emitter saturation voltage v be(sat) ? ? -1.1 -1.1 v i c = -1a, i b = -50ma i c = -1a, i b = -100ma base-emitter turn on voltage v be ( on ) ? ? -1 v v ce = -5v, i c = -1a small signal characteristics output capacitance c obo ? ? 20 pf v cb = -10v, f = 1.0mhz current gain-bandwidth product f t 150 ? ? mhz v ce = -10v, i c = -50ma, f = 100mhz switching characteristics turn-on time t on ? 60 ? ns v cc = -10v i c = -1a, i b1 = i b2 = -50ma delay time t d ? 20 ? ns rise time t r ? 40 ? ns turn-off time t off ? 167 ? ns storage time t s ? 140 ? ns fall time t f ? 27 ? ns notes: 4. measured under puls ed conditions. pulse width = 300 s. duty cycle 2%. 0 200 400 25 50 75 100 125 150 p , p o we r dissi p a t i o n (mw) d t , ambient temperature (c) fig. 1 power dissipation vs. ambient temperature (note 3) a 600 0 r = 208c/w ja 300 500 100 0.1 1 10 100 -v , collector-emitter voltage (v) ce fig. 2 typical collector current vs. collector-emitter voltage (note 3) 0.1 1 10 -i , c o lle c t o r c u r r en t (a) c 0.01 pw = 100ms pw = 10ms pw = 1ms dc
dss5220v document number: ds31660 rev. 2 - 2 3 of 5 www.diodes.com march 2009 ? diodes incorporated dss5220 v new product 110100 -i , collector current (ma) c fig. 3 typical dc current gain vs. collector current 10,000 1,000 0 200 400 600 800 1,000 h, d c c u r r en t g ain fe t = 150c a t = 25c a t = -55c a t = 85c a v = -2v ce 110100 -i , collector current (ma) c fig. 4 typical collector-emitter saturation voltage vs. collector current 0.1 10,000 1,000 0.001 0.01 0.1 1 -v , c o lle c t o r -emi t t e r saturation ce(sat) voltage (v) i/i = 10 cb t = 85c a t = 25c a t = -55c a t = 150c a 1 10 100 1,000 -i , collector current (ma) c fig. 5 typical base-emitter turn-on voltage vs. collector current 10,000 0 0.2 0.4 0.6 0.8 1.0 1. 2 -v , base-emi t t e r t u r n - o n v o l t a g e (v) be(on) t = 150c a t = 25c a t = -55c a t = 85c a v = -5v ce 0.1 1 10 100 10,000 -i , collector current (ma) c fig. 6 typical base-emitter saturation voltage vs. collector current 1,000 0 0.2 0.4 0.6 0.8 1.0 1.2 -v , base-emi t t e r sa t u r a t i o n v o l t a g e (v) be(sat) t = 150c a t = 25c a t = -55c a t = 85c a i = 10 cb /i 1 10 100 1,000 0.1 1 10 100 v , reverse voltage (v) r fig. 7 typical capacitance characteristics c a p a c i t an c e (pf) c ibo c obo f = 1mhz
dss5220v document number: ds31660 rev. 2 - 2 4 of 5 www.diodes.com march 2009 ? diodes incorporated dss5220 v new product 0.00001 0.0001 0.001 0.01 0.1 1 10 100 fig. 8 transient thermal response (note 3) t , pulse duration time (s) 1 10,000 1,000 0.001 0.01 0.1 1 r(t), t r ansien t t h e r mal r esis t an c e t - t = p * r (t) duty cycle, d = t /t ja ja 12 r (t) = r(t) * ja r r = 145c/w ja ja p(pk) t 1 t 2 d = 0.7 d = 0.3 d = 0.1 d = 0.05 d = 0.02 d = 0.01 d = 0.005 d = single pulse d = 0.9 d = 0.5 ordering information (note 5) part number case packaging DSS5220V-7 sot-563 3000/tape & reel notes: 5. for packaging details, go to our w ebsite at http://www.diodes .com/datasheets/ap02007.pdf. marking information date code key year 2008 2009 2010 2011 2012 2013 2014 2015 code v w x y z a b c month jan feb mar apr may jun jul aug sep oct nov dec code 1 2 3 4 5 6 7 8 9 o n d package outline dimensions sot-563 dim min max typ a 0.15 0.30 0.20 b 1.10 1.25 1.20 c 1.55 1.70 1.60 d - - 0.50 g 0.90 1.10 1.00 h 1.50 1.70 1.60 k 0.55 0.60 0.60 l 0.10 0.30 0.20 m 0.10 0.18 0.11 all dimensions in mm zp7 = product type marking code ym = date code marking y = year (ex: v = 2008) m = month (ex: 9 = september) a m l b c h k g d zp7 ym
dss5220v document number: ds31660 rev. 2 - 2 5 of 5 www.diodes.com march 2009 ? diodes incorporated dss5220 v new product suggested pad layout important notice diodes incorporated and its subsidiaries rese rve the right to make modifications, enhanc ements, improvements, corrections or ot her changes without further notice to any product herein. diodes incorporat ed does not assume any liability arising out of the application or use of any product described herein; neither does it convey any license under its paten t rights, nor the rights of others. the user of products in such applications shall assume all risks of such use and will agree to hold diodes inco rporated and all the companies whose products ar e represented on our website, harmless against all damages. life support diodes incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written approval of the president of diodes incorporated. dimensions value (in mm) z 2.2 g 1.2 x 0.375 y 0.5 c1 1.7 c2 0.5 x z y c1 c2 c2 g
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